Toshiba 2SC2782 Transistor 36V 20A 220W 175Mhz

The 2SC2782 is an NPN Bipolar Junction Transistor (BJT) designed for high-power RF applications. It is primarily used in RF amplification circuits such as those found in radio communication systems. This is original TOSHIBA brand and new.

Technical Specifications:

• Transistor Type: NPN BJT
• Maximum Collector-Emitter Voltage (Vceo): 36V
• Maximum Collector Current (Ic): 20A
• Maximum Power Dissipation (Pd): 220W
• Frequency Range: 30 MHz - 175 MHz
• Gain (hFE): 10 - 50
• Output Power (Pout): 100W (typical)
• Operating Temperature Range: -65°C to +200°C
• Package Type: TO-220 or similar (may vary depending on the manufacturer)

Key Features:

• High Output Power: Provides 100W output power.
• Wide Frequency Range: Capable of handling RF signals from 30 MHz to 175 MHz.
• High Power Dissipation: Supports up to 200W with proper cooling for high performance.
• Durability: Built to withstand harsh operating conditions.

Applications:

• Radio Communication Systems: Used in RF amplification circuits.
• Industrial RF Systems: For RF signal transmission and reception circuits.
• Radio Transmitters: Used in medium-frequency radio communication applications.

The 2SC2782 is an ideal transistor for RF applications that require high power and reliability. With proper thermal management, it offers efficient and long-lasting performance.

This product contains Beryllium Oxide (Beryllia) ceramics, and its dust or vapor can be harmful to humans. Important precautions are as follows:

1. Hazard Warning: Dust or vapor may be dangerous to human health.
2. Handling Restrictions: Do not break, cut, crush, or chemically dissolve the product.
3. Waste Management: Dispose of the product in accordance with legal regulations.
4. Mixing Warning: Do not intermingle with industrial or domestic waste.

If you need more detailed information, feel free to ask!