IRF510 N-Channel Power MOSFET – TO-220

The IRF510 is a high-performance N-Channel Power MOSFET, engineered for efficient power switching in low to moderate applications. Its versatility makes it a popular choice for RF amplifiers, switching regulators, power amplifiers, and a broad range of general-purpose circuits.

🔧 Key Features of IRF510 N-Channel Power MOSFET

• Package: TO-220
• Drain-Source Voltage (VDSS): 100V
• Continuous Drain Current (ID): 5.6A
• Power Dissipation (PD): 43W
• Gate Threshold Voltage (VGS(th)): 2.0–4.0V
• RDS(on) (Max): 0.54Ω
• Operating Temperature: -55°C to +150°C

🧰 Applications of IRF510 N-Channel Power MOSFET

• Switching power supplies
• RF and audio amplifiers
• Battery-powered circuits
• Inverters and converters
• Hobbyist and educational electronics

📦 What's Included in the Package?

• 1 × IRF510 N-Channel Power MOSFET – TO-220