BU110 NPN Transistor - 150V, 10A, 60W TO-3 by Mospec

The BU110 is an original Mospec NPN transistor, designed for exceptional performance in various electronics applications. This high-power transistor is perfect for both electronics engineers and hobbyists working with Arduino, Raspberry Pi, and other microcontroller-based projects.

Key Specifications

Here are the key technical specifications of the BU110 NPN Transistor:

• Type: Silicon NPN Transistor
• Manufacturer: Discrete Semiconductor Industries - DSI
• Case: TO3
• Collector-Emitter Breakdown Voltage (VBRCEO): 150V
• Maximum Power Dissipation (PD): 30W
• Transition Time (tf): 1.0µs
• Minimum Forward Current Transfer Ratio (hFE): 8.0
• Maximum Collector Current (IC): 8.0A at Test Current (IC(test)) of 6.0A
• Maximum Collector-Base Leakage Current (ICBO): 15mA at Maximum Collector-Base Voltage (VCB)
• Polarity: NPN
• Derate Above 25°C: 588mW/°C
• Minimum Transition Frequency (fT): 15MHz
• Maximum Operating Temperature: 140°C at Collector-Emitter Voltage (VCE) of 1.5V
• Pinout Equivalence Number: 3-14
• Surface Mount: No
• Maximum Collector Power Dissipation (PC): 60W
• Maximum Collector-Base Voltage (VCB): 330V
• Maximum Collector-Emitter Voltage (VCE): 150V
• Maximum Emitter-Base Voltage (VEB): 6V
• Maximum Collector Current (IC max): 10A
• Maximum Operating Junction Temperature (Tj): 115°C
• Transition Frequency (fT): 15MHz
• Forward Current Transfer Ratio (hFE), MIN: 8

With its robust specifications, the BU110 NPN Transistor is a reliable and versatile component for your electronics projects.